Philips Semiconductors

Objective specification

Silicon Diffused Power Transistor

BU4550AL

GENERAL DESCRIPTION

Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full pack

envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features

exceptional tolerance to base drive and collector current load variations resulting in a very low worst case

dissipation.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

V

CESM

Collector-emitter voltage peak value

V

-

1500

V

V

CEO

Collector-emitter voltage (open base)

-

800

V

I

C

Collector current (DC)

-

30

A

I

CM

Collector current peak value

-

40

A

P

tot

Total power dissipation

T

-

125

W

V

CEsat

Collector-emitter saturation voltage

I

-

3.0

V

I

Csat

Collector saturation current

f = 32kHz

20

-

A

f = 130kHz

8

-

A

t

f

Fall time

I

t.b.f

t.b.f

µs

I

t.b.f

t.b.f

µs

PINNING - SOT430

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

1

base

2

collector

3

emitter

heat

collector

sink

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

CESM

Collector-emitter voltage peak value

V

-

1500

V

V

CEO

Collector-emitter voltage (open base)

-

800

V

I

C

Collector current (DC)

-

25

A

I

CM

Collector current peak value

-

40

A

I

B

Base current (DC)

-

10

A

I

BM

Base current peak value

-

15

A

-I

BM

Reverse base current peak value

1

-10

A

P

tot

Total power dissipation

T

25 ˚C

-

125

W

T

stg

Storage temperature

-55

150

˚C

T

j

Junction temperature

-

150

˚C

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

R

th j-mb

Junction to mounting base

-

-

1.0

K/W

R

th j-a

Junction to ambient

in free air

35

-

K/W

12

3

b

c

e

1 Turn-off current.

January 1998

1

Rev 1.000