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BU508AF Datasheet(PDF) 2 Page - NXP Semiconductors |
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BU508AF Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AF ISOLATION LIMITING VALUE & CHARACTERISTIC T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V isol Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V three terminals to external heatsink C isol Capacitance from T2 to external f = 1 MHz - 22 - pF heatsink STATIC CHARACTERISTICS T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CES Collector cut-off current 1 V BE = 0 V; VCE = VCESMmax - - 1.0 mA I CES V BE = 0 V; VCE = VCESMmax; - - 2.0 mA T j = 125 ˚C I EBO Emitter cut-off current V EB = 6.0 V; IC = 0 A - - 10 mA V CEOsus Collector-emitter sustaining voltage I B = 0 A; IC = 100 mA; 700 - - V L = 25 mH V CEsat Collector-emitter saturation voltages I C = 4.5 A; IB = 1.6 A - - 1.0 V V BEsat Base-emitter saturation voltage I C = 4.5 A; IB = 2 A - - 1.1 V h FE DC current gain I C = 100 mA; VCE = 5 V 6 13 30 - DYNAMIC CHARACTERISTICS T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT f T Transition frequency at f = 5 MHz I C = 0.1 A;VCE = 5 V 7 - MHz C C Collector capacitance at f = 1MHz V CB = 10 V 125 - pF Switching times (16 kHz line I Csat = 4.5 A;Lc 1 mH;Cfb = 4 nF deflection circuit) I B(end) = 1.4 A; LB = 6 µH; -VBB = -4 V; -I BM = 2.25 A t s Turn-off storage time 6.5 - µs t f Turn-off fall time 0.7 - µs 1 Measured with half sine-wave voltage (curve tracer). July 1998 2 Rev 1.200 |
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