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BU508AF Datasheet(PDF) 2 Page - NXP Semiconductors

Part # BU508AF
Description  Silicon Diffused Power Transistor
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BU508AF Datasheet(HTML) 2 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508AF
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
Repetitive peak voltage from all
R.H.
≤ 65 % ; clean and dustfree
-
2500
V
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
-
22
-
pF
heatsink
STATIC CHARACTERISTICS
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
1
V
BE = 0 V; VCE = VCESMmax
-
-
1.0
mA
I
CES
V
BE = 0 V; VCE = VCESMmax;
-
-
2.0
mA
T
j = 125 ˚C
I
EBO
Emitter cut-off current
V
EB = 6.0 V; IC = 0 A
-
-
10
mA
V
CEOsus
Collector-emitter sustaining voltage
I
B = 0 A; IC = 100 mA;
700
-
-
V
L = 25 mH
V
CEsat
Collector-emitter saturation voltages I
C = 4.5 A; IB = 1.6 A
-
-
1.0
V
V
BEsat
Base-emitter saturation voltage
I
C = 4.5 A; IB = 2 A
-
-
1.1
V
h
FE
DC current gain
I
C = 100 mA; VCE = 5 V
6
13
30
-
DYNAMIC CHARACTERISTICS
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
f
T
Transition frequency at f = 5 MHz
I
C = 0.1 A;VCE = 5 V
7
-
MHz
C
C
Collector capacitance at f = 1MHz
V
CB = 10 V
125
-
pF
Switching times (16 kHz line
I
Csat = 4.5 A;Lc 1 mH;Cfb = 4 nF
deflection circuit)
I
B(end) = 1.4 A; LB = 6 µH; -VBB = -4 V;
-I
BM = 2.25 A
t
s
Turn-off storage time
6.5
-
µs
t
f
Turn-off fall time
0.7
-
µs
1 Measured with half sine-wave voltage (curve tracer).
July 1998
2
Rev 1.200


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