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BU508AW Datasheet(PDF) 4 Page - NXP Semiconductors |
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BU508AW Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 6 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AW Fig.9. Typical collector-emitter saturation voltage. V CEsat = f (IB); parameter IC Fig.10. Transient thermal impedance. Z th j-hs = f(t); parameter D = tp/T Fig.11. Normalised power dissipation. PD% = 100 ⋅P D/PD 25˚C = f (Ths) Fig.12. Forward bias safe operating area. T mb < 25˚C (1) P tot max line. (2) Second-breakdown limit (independent of temperature). I Region of permissible DC operation. II Permissible extension for repetitive operation. BU508AD 0.1 1 10 0.1 1 10 IC = 4.5A IC = 6A IC = 3A VCESAT/V IB/A 0 20 40 60 80 100 120 140 Ths / C PD% Normalised Power Derating 120 110 100 90 80 70 60 50 40 30 20 10 0 with heatsink compound 1.0E-07 1.0E-5 1.0E-3 1.0E-1 1.0E+1 0.001 0.01 0.1 1 10 0 0.2 0.1 0.05 0.02 0.5 bu508aw t / s Zth K/W D = tp tp T T P t D July 1998 4 Rev 1.200 |
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