70N06

MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 8

www.unisonic.com.tw

QW-R502-089,A

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

60

V

Gate to Source Voltage

±20

V

70

A

Continuous Drain Current

56

A

Drain Current Pulsed (Note 1)

280

A

Single Pulsed Avalanche Energy (Note 2)

600

mJ

Repetitive Avalanche Energy (Note 1)

20

mJ

Peak Diode Recovery dv/dt (Note 3)

dv/dt

10

V/ns

200

W

Derating Factor above 25℃

1.4

W/℃

Operation Junction Temperature

-55 ~ +150

℃

Storage Temperature

-55 ~ +150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Thermal Resistance, Junction-to-Case

1.2

°C/W

Thermal Resistance, Case-to-Sink

0.5

°C/W

Thermal Resistance, Junction-to-Ambient

62.5

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP

MAX UNIT

Off Characteristics

Drain-Source Breakdown Voltage

60

V

Breakdown Voltage Temperature

Coefficient

BV

△

0.08

V/℃

1

µA

Drain-Source Leakage Current

10

µA

Gate-Source Leakage Current

100

nA

Gate-Source Leakage Reverse

-100

nA

On Characteristics

Gate Threshold Voltage

2.0

4.0

V

Static Drain-Source On-State

Resistance

12

15

mΩ

Dynamic Characteristics

Input Capacitance

3300

pF

Output Capacitance

530

pF

Reverse Transfer Capacitance

f = 1MHz

80

pF

Switching Characteristics

Turn-On Delay Time

12

ns

Rise Time

79

ns

Turn-Off Delay Time

80

ns

Fall Time

52

ns

Total Gate Charge

90

140

nC

Gate-Source Charge

20

35

nC

Gate-Drain Charge (Miller Charge)

30

45

nC