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70N06L-TA3-T Datasheet(PDF) 3 Page - Unisonic Technologies |
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70N06L-TA3-T Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 8 page 70N06 MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 8 www.unisonic.com.tw QW-R502-089,A ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Source-Drain Diode Ratings and Characteristics Diode Forward Voltage VSD IS = 70A, VGS = 0 V 1.4 V Continuous Source Current IS 70 Pulsed Source Current ISM Integral Reverse p-n Junction Diode in the MOSFET G S D 280 A Reverse Recovery Time tRR 90 ns Reverse Recovery Charge QRR IS = 70A, VGS = 0 V dIF / dt = 100 A/µs 300 µC Note 1. Repeativity rating: pulse width limited by junction temperature 2. L=19.5mH, IAS=70A, RG=20Ω, Starting TJ=25℃ 3. ISD≤48A, di/dt≤300A/µs, VDD≤BVDSS, Starting TJ=25℃ 4. Pulse Test: Pulse Width≤300µs,Duty Cycle≤2% 5. Essentially independent of operating temperature. |
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