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IRIS-W6754 Datasheet(PDF) 2 Page - International Rectifier

Part # IRIS-W6754
Description  INTEGRATED SWITCHER
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRIS-W6754 Datasheet(HTML) 2 Page - International Rectifier

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Absolute Maximum Ratings (Ta=25ºC)
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The
thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
IRIS-W6754
Symbol
Definition
Terminal
sMax. RatingsUnits
Note
IDpeak
Drain Current * 1
1 - 3
15
A
Single Pulse
Single Pulse
VDD=99V,L=20mH
ILpeak=5.1A
Vcc
Input voltage for control part
4 - 3
35
V
VSSOLP
SS/OLP pin voltage
5 - 3
-0.5 ~ 6.0
V
IFB
FB pin inflow current
6- 3
10
mA
VFB
FB pin voltage
6- 3
-0.5 ~ 9.0
V
within the limits of IFB
VOCPBD O.C.P/F.B pin voltage
7- 3
-1.5 ~ 5.0
V
28.0
With infinite heatsink
1.1
Without heatsink
PD2
Power dissipation for control part
(MIC)
4 - 3
0.8
W
Specified by Vcc x
Icc
TF
Internal frame temperature in
operation
-
-20 ~ +115
Refer to recommended
operating temperature
Top
Operating ambient temperature
-
-20 ~ +115
Tstg
Storage temperature
-
-40 ~ +125
Tch
Channel temperature
-
150
W
15
Ta=-20~+125℃
IDMAX
A
Single pulse avalanche energy *3
1 - 3
292
mJ
Maximum switching current *2
1 - 3
1 - 3
Power dissipation of MOSFET *4
PD1
EAS
*1 Refer to MOS FET A.S.O. curve
*2 Maximum switching current
The maximum switching current is the Drain current determined by the drive voltage of the IC and
threshold voltage (Vth) of the MOS FET.
*3 Refer to MOS FET Tch-EAS curve
*4 Refer to MOS FET Ta-PD1 curve


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