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TSHF5410 Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. TSHF5410
Description  High Speed Infrared Emitting Diode in T-1 3/4 Package
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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TSHF5410
Document Number 81303
Rev. 1.1, 26-Oct-06
Vishay Semiconductors
www.vishay.com
1
94 8390
e2
High Speed Infrared Emitting Diode in T-1¾ Package
Description
TSHF5410 is a high speed infrared emitting diode in
GaAlAs double hetero (DH) technology, molded in a
clear, untinted plastic package.
TSHF5410 combines high speed with high radiant
power at wavelength of 890 nm.
Features
• High modulation bandwidth
• Extra high radiant power and radiant
intensity
• Low forward voltage
• Suitable for high pulse current operation
• Standard package T-1¾ (
∅ 5 mm)
• Angle of half intensity
ϕ = ± 22°
• Peak wavelength
λ
p = 890 nm
• High reliability
• Good spectral matching to Si photodetectors
• Lead (Pb)-free component
• Component in accordance with RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Infrared high speed remote control and free air data
transmission systems with high modulation frequen-
cies or high data transmission rate requirements.
TSHF5410 is ideal for the design of transmission sys-
tems according to IrDA requirements and for carrier
frequency based systems (e.g. ASK / FSK - coded,
450 kHz or 1.3 MHz).
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Part
Remarks
TSHF5410
MOQ: 4000 pcs
Parameter
Test condition
Symbol
Value
Unit
Reverse Voltage
VR
5V
Forward Current
IF
100
mA
Peak Forward Current
tp/T = 0.5, tp = 100 µs
IFM
200
mA
Surge Forward Current
tp = 100 µs
IFSM
1.5
A
Power Dissipation
PV
180
mW
Junction Temperature
Tj
100
°C
Operating Temperature Range
Tamb
- 40 to + 85
°C
Storage Temperature Range
Tstg
- 40 to + 100
°C
Soldering Temperature
t
≤ 5 sec, 2 mm from case
Tsd
260
°C
Thermal Resistance Junction/
Ambient
RthJA
270
K/W




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