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TSHF5410 Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. TSHF5410
Description  High Speed Infrared Emitting Diode in T-1 3/4 Package
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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www.vishay.com
2
Document Number 81303
Rev. 1.1, 26-Oct-06
TSHF5410
Vishay Semiconductors
Basic Characteristics
Tamb = 25 °C, unless otherwise specified
Figure 1. Power Dissipation Limit vs. Ambient Temperature
20112
0
50
100
150
200
10
20
30
40
50
60
70
80
90
0
100
T
amb - Ambient Temperature (°C)
R
thJA
= 270 K/W
Figure 2. Forward Current Limit vs. Ambient Temperature
T
amb - Ambient Temperature (°C)
20113
010
20
30
40
50
60
70
8090 100
0
25
50
75
100
125
R
thJA
= 270 K/W
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward Voltage
IF = 100 mA, tp = 20 ms
VF
1.4
1.6
V
IF = 1 A, tp = 100 µs
VF
2.3
V
Temp. Coefficient of VF
IF = 100 mA
TKVF
- 2.1
mV/K
Reverse Current
VR = 5 V
IR
10
µA
Junction Capacitance
VR = 0 V, f = 1 MHz, E = 0
Cj
125
pF
Radiant Intensity
IF = 100 mA, tp = 20 ms
Ie
34
65
170
mW/sr
IF = 1 A, tp = 100 µs
Ie
650
mW/sr
Radiant Power
IF = 100 mA, tp = 20 ms
φ
e
48
mW
Temp. Coefficient of
φ
e
IF = 100 mA
TK
φ
e
- 0.35
%/K
Angle of Half Intensity
ϕ
± 22
deg
Peak Wavelength
IF = 100 mA
λ
p
890
nm
Spectral Bandwidth
IF = 100 mA
Δλ
40
nm
Temp. Coefficient of
λ
p
IF = 100 mA
TK
λ
p
0.25
nm/K
Rise Time
IF = 100 mA
tr
30
ns
Fall Time
IF = 100 mA
tf
30
ns
Cut-Off Frequency
IDC = 70 mA, IAC = 30 mA pp
fc
12
MHz
Virtual Source Diameter
2.1
mm




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