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TSHF5410 Datasheet(PDF) 3 Page - Vishay Siliconix

Part No. TSHF5410
Description  High Speed Infrared Emitting Diode in T-1 3/4 Package
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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TSHF5410
Document Number 81303
Rev. 1.1, 26-Oct-06
Vishay Semiconductors
www.vishay.com
3
Typical Characteristics
Tamb = 25 °C unless otherwise specified
Figure 3. Pulse Forward Current vs. Pulse Duration
Figure 4. Forward Current vs. Forward Voltage
Figure 5. Radiant Intensity vs. Forward Current
100
1000
0.01
0.1
1.0
10
100
t
P - Pulse Duration (ms)
16031
t
P/T = 0.01
0.05
0.2
0.5
0.1
0.02
T
amb < 50°
18873
1000
100
10
1
V
F - Forward Voltage (V)
02
4
t
P = 100 µs
t
P/T = 0.001
13
0.1
1.0
10.0
100.0
1000.0
1
10
100
1000
18220
I
F - Forward Current (mA)
Figure 6. Radiant Power vs. Forward Current
Figure 7. Relative Radiant Power vs. Wavelength
Figure 8. Relative Radiant Intensity vs. Angular Displacement
0.1
1.0
10.0
100.0
1000.0
110
100
1000
16971
IF - Forward Current (mA)
800
900
λ - Wavelength (nm)
1000
20082
0
0.25
0.5
0.75
1.0
1.25
94 8883
0.6
0.9
0.8
30°
10°
20°
40°
50°
60°
70°
80°
0.7
1.0
0.6
0.4
0.2
0
0.2
0.4




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