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IRFR014A Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part # IRFR014A
Description  ADVANCED POWER MOSFET
Download  7 Pages
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

IRFR014A Datasheet(HTML) 1 Page - Fairchild Semiconductor

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IRFR/U014A
BV
DSS = 60 V
R
DS(on) = 0.14Ω
I
D = 8.2 A
60
8.2
5.2
33
±20
58
8.2
1.8
5.5
2.5
18
0.14
- 55 to +150
300
7.04
50
110
--
--
--
♦ Avalanche Rugged Technology
♦ Rugged Gate Oxide Technology
♦ Lower Input Capacitance
♦ Improved Gate Charge
♦ Extended Safe Operating Area
♦ Lower Leakage Current: 10µA (Max.) @ V
DS = 60V
♦ Lower R
DS(ON): 0.097Ω (Typ.)
$GYDQFHG 3RZHU 026)(7
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
RθJC
RθJA
RθJA
°C/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
*
* When mounted on the minimum pad size recommended (PCB Mount).
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (TA=25°C)
Total Power Dissipation (TC=25°C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
Characteristic
Value
Units
Symbol
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
ID
TJ , TSTG
TL
A
V
mJ
A
mJ
V/ns
W
W
W/
°C
A
°C
VDSS
V
*
D-PAK
1. Gate 2. Drain 3. Source
1
2
3
I-PAK
1
3
2
©1999 Fairchild Semiconductor Corporation
Rev. B


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