SI4532DY datasheet(3/7 Pages) VISHAY

Part #	SI4532DY

Description	N- and P-Channel 30-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

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Si4532DY

Vishay Siliconix

Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054

S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com

S-56944—Rev. D, 23-Nov-93

Siliconix was formerly a division of TEMIC Semiconductors

3-3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

NCHANNEL

0

4

8

12

16

20

024

68

0

2

4

6

8

10

02468

10

0.4

0.8

1.2

1.6

2.0

–50

–25

0

25

50

75

100

125

150

0

0.04

0.08

0.12

0.16

0.20

0

4

8

12

16

20

0

150

300

450

600

750

0

5

10

15

20

25

30

0

4

8

12

16

20

0123456

Output Characteristics

Transfer Characteristics

Gate Charge

OnResistance vs. Drain Current

VDS – Drain-to-Source Voltage (V)

VGS = 10 thru 6 V

5 V

VGS – Gate-to-Source Voltage (V)

TC = –55_C

Qg – Total Gate Charge (nC)

VDS – Drain-to-Source Voltage (V)

Crss

Coss

Ciss

VDS = 10 V

ID = 3.9 A

ID – Drain Current (A)

Capacitance

OnResistance vs. Junction Temperature

VGS = 10 V

ID = 3.9 A

TJ – Junction Temperature (_C)

VGS = 10 V

VGS = 4.5 V

4 V

3 V

125

_C

25

_C

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