SST25LF020A datasheet(1/26 Pages) SST | 2 Mbit / 4 Mbit SPI Serial Flash

1 page

S71242-05-000

1/06

The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

Data Sheet

FEATURES:

•

Single 3.0-3.6V Read and Write Operations

•

Serial Interface Architecture

– SPI Compatible: Mode 0 and Mode 3

•

33 MHz Max Clock Frequency

•

Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

•

Low Power Consumption:

– Active Read Current: 7 mA (typical)

– Standby Current: 8 µA (typical)

•

Flexible Erase Capability

– Uniform 4 KByte sectors

– Uniform 32 KByte overlay blocks

•

Fast Erase and Byte-Program:

– Chip-Erase Time: 70 ms (typical)

– Sector- or Block-Erase Time: 18 ms (typical)

– Byte-Program Time: 14 µs (typical)

•

Auto Address Increment (AAI) Programming

– Decrease total chip programming time over

Byte-Program operations

•

End-of-Write Detection

– Software Status

•

Hold Pin (HOLD#)

– Suspends a serial sequence to the memory

without deselecting the device

•

Write Protection (WP#)

– Enables/Disables the Lock-Down function of the

status register

•

Software Write Protection

– Write protection through Block-Protection bits in

status register

•

Temperature Range

– Commercial: 0°C to +70°C

– Industrial: -40°C to +85°C

– Extended: -20°C to +85°C

•

Packages Available

– 8-lead SOIC 150 mil body width

for SST25LF020A

– 8-lead SOIC 200 mil body width

for SST25LF040A

– 8-contact WSON (5mm x 6mm)

•

All non-Pb (lead-free) devices are RoHS compliant

PRODUCT DESCRIPTION

SST’s serial flash family features a four-wire, SPI-com-

patible interface that allows for a low pin-count package

occupying less board space and ultimately lowering total

system costs. SST25LF020A/040A SPI serial flash

memories are manufactured with SST’s proprietary, high

performance CMOS SuperFlash technology. The split-

gate cell design and thick-oxide tunneling injector attain

better reliability and manufacturability compared with

alternate approaches.

The SST25LF020A/040A devices significantly improve

performance, while lowering power consumption. The

total energy consumed is a function of the applied volt-

age, current, and time of application. Since for any given

voltage range, the SuperFlash technology uses less cur-

rent to program and has a shorter erase time, the total

energy consumed during any Erase or Program operation

is less than alternative flash memory technologies. The

SST25LF020A/040A devices operate with a single 3.0-

3.6V power supply.

The SST25LF020A devices are offered in an 8-lead SOIC

150 mil body width (SA) package. The SST25LF040A

devices are offered in an 8-lead SOIC 200 mil body width

(S2A) package. All densities are offered in the 8-contact

WSON package. See Figure 1 for the pin assignments.

2 Mbit / 4 Mbit SPI Serial Flash

SST25LF020A / SST25LF040A

SST25LF020A / 040A2Mb / 4Mb Serial Peripheral Interface (SPI) flash memory

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