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BUK104-50L Datasheet(PDF) 4 Page - NXP Semiconductors |
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BUK104-50L Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 14 page Philips Semiconductors Product specification PowerMOS transistor BUK104-50L/S Logic level TOPFET BUK104-50LP/SP OVERLOAD PROTECTION CHARACTERISTICS With adequate protection supply Provided there is adequate input Refer also to OVERLOAD voltage TOPFET detects when one series resistance it switches off PROTECTION LIMITING VALUES of the overload thresholds is and remains latched off until reset and INPUT CHARACTERISTICS. exceeded. by the protection supply pin. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Short circuit load protection 1 V PS = VPSN 2; T mb = 25 ˚C; L ≤ 10 µH; R I ≥ 2 kΩ E DS(TO) Overload threshold energy V DD = 13 V; VIS = 10 V - 150 - mJ t d sc Response time V DD = 13 V; VIS = 10 V - 375 - µs Over temperature protection V PS = VPSN; RI ≥ 2 kΩ T j(TO) Threshold junction temperature from I D ≥ 0.65 A 3 150 - - ˚C TRANSFER CHARACTERISTICS T mb = 25 ˚C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT g fs Forward transconductance V DS = 10 V; IDM = 7.5 A tp ≤ 300 µs; 5 9 - S δ ≤ 0.01 I D Drain current 4 V DS = 13 V; V IS = 5 V - 25 - A V IS = 10 V 40 - A PROTECTION SUPPLY CHARACTERISTICS T mb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Protection supply I PS, Protection supply current normal operation or I PSL protection latched BUK104-50L V PS = 5 V - 0.2 0.35 mA BUK104-50S V PS = 10 V - 0.4 1.0 mA V PSR Protection reset voltage 5 1.5 2.5 3.5 V T j = 150 ˚C 1.0 - - V V (CL)PS Protection clamp voltage I P = 1.35 mA 11 13 - V REVERSE DIODE CHARACTERISTICS T mb = 25 ˚C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V SDS Forward voltage I S = 15 A; VIS = VPS = VFS = 0 V; - 1.0 1.5 V t p = 300 µs t rr Reverse recovery time not applicable 6 -- -- 1 The short circuit load protection is able to save the device providing the instantaneous on-state dissipation is less than the limiting value for P DSM, which is always the case when VDS is less than VDSP maximum. 2 At the appropriate nominal protection supply voltage for each type. Refer to QUICK REFERENCE DATA. 3 The over temperature protection feature requires a minimum on-state drain source voltage for correct operation. The specified minimum I D ensures this condition. 4 During overload condition. Refer also to OVERLOAD PROTECTION LIMITING VALUES and CHARACTERISTICS. 5 The supply voltage below which the overload protection circuits will be reset. 6 The reverse diode of this type is not intended for applications requiring fast reverse recovery. January 1993 4 Rev 1.200 |
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