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MRF7S19080HSR3 Datasheet(PDF) 2 Page - Freescale Semiconductor, Inc |
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MRF7S19080HSR3 Datasheet(HTML) 2 Page - Freescale Semiconductor, Inc |
2 / 16 page 2 RF Device Data Freescale Semiconductor MRF7S19080HR3 MRF7S19080HSR3 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22-A114) 1C (Minimum) Machine Model (per EIA/JESD22-A115) A (Minimum) Charge Device Model (per JESD22-C101) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 174 μAdc) VGS(th) 1.2 2 2.7 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 750 mAdc, Measured in Functional Test) VGS(Q) 2 2.7 3.8 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1.74 Adc) VDS(on) 0.1 0.21 0.3 Vdc Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 0.64 — pF Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 297 — pF Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 750 mA, Pout = 24 W Avg., f = 1932.5 MHz and f = 1987.5 MHz, Single-Carrier W-CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Gps 17 18 20 dB Drain Efficiency ηD 30 32 — % Output Peak-to-Average Ratio @ 0.01% Probability on CCDF PAR 5.7 6.2 — dB Adjacent Channel Power Ratio ACPR — -38 -35 dBc Input Return Loss IRL — -20 -9 dB 1. Part internally matched both on input and output. (continued) |
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