BUK108-50GL datasheet(6/11 Pages) PHILIPS

Part #	BUK108-50GL

Description	PowerMOS transistor Logic level TOPFET

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

PowerMOS transistor

BUK108-50GL

Logic level TOPFET

Fig.8. Typical on-state resistance, T

j = 25 ˚C.

R

DS(ON) = f(ID); parameter VIS; tp = 250 µs

Fig.9. Typical transfer characteristics, T

j = 25 ˚C.

I

D = f(VIS) ; conditions: VDS = 10 V; tp = 250 µs

Fig.10. Typical transconductance, T

j = 25 ˚C.

g

fs = f(ID); conditions: VDS = 10 V; tp = 250 µs

Fig.11. Normalised drain-source on-state resistance.

a = R

DS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 7.5 A; VIS = 5 V

Fig.12. Typical overload protection characteristics.

t

d sc = f(PDS); conditions: VIS ≥ 4 V; Tj = 25 ˚C.

Fig.13. Normalised limiting overload dissipation.

P

DSM% =100⋅PDSM/PDSM(25 ˚C) = f(Tmb)

0

10

20

30

BUK108-50GL

ID / A

RDS(ON) / Ohm

0.20

0.15

0.10

0.05

0

5.5

6

5

4.5

4

3.5

VIS / V =

515

25

35

-60

-40

-20

0

20

40

60

80

100 120 140

Tj / C

a

Normalised RDS(ON) = f(Tj)

1.5

1.0

0.5

0

2

4

6

8

BUK108-50GL

VIS / V

ID / A

40

35

30

25

20

15

10

5

0

0.01

1

PDS / kW

td sc / ms

BUK108-50GL

100

10

1

0.1

PDSM

0

20

40

ID / A

gfs / S

BUK108-50GL

12

11

10

9

8

7

6

5

4

3

2

1

0

10

30

50

-60

-40

-20

0

20

40

60

80

100

120

140

Tmb / C

PDSM%

120

100

80

60

40

20

0

June 1996

6

Rev 1.000

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