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SST13LP01 Datasheet(PDF) 1 Page - Silicon Storage Technology, Inc |
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SST13LP01 Datasheet(HTML) 1 Page - Silicon Storage Technology, Inc |
1 / 27 page ©2005 SST Communications Corp. S71287-00-000 11/05 1 The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice. Preliminary Specifications FEATURES: • High Gain: – Typically 28 dB gain across 2.4-2.5 GHz over temperature 0°C to +85°C – Typically 30-33 dB gain across 4.9-5.8 GHz over temperature 0°C to +85°C • High linear output power: – >29 dBm P1dB across 2.4-2.5 GHz (Exceeding maximum rating of average output power, never measure with CW source! Pulsed single-tone source with <50% duty cycle is rec- ommended.) – Meets 802.11g OFDM ACPR requirement up to 23 dBm – Added EVM~4% up to 21 dBm for 54 Mbps 802.11g signal – Meets 802.11b ACPR requirement up to 23 dBm – ~28 dBm P1dB (Pulsed single-tone signal) across 4.9~5.8 GHz – Meets 802.11a OFDM ACPR requirement up to 22 dBm over whole band – Added EVM~4% up to 20 dBm for 54 Mbps 802.11a signal • High power-added efficiency/Low operating current for both 802.11a/b/g applications – ~24%/250 mA @ POUT = 23 dBm for 802.11g – ~23%/260 mA @ POUT = 23 dBm for 802.11b – ~9.5%/320 mA @ POUT = 20 dBm for 802.11a • Built-in Ultra-low IREF power-up/down control –IREF <3 mA • Low idle current –~70 mA ICQ (802.11b/g) – ~170 mA ICQ (802.11a) • High-speed power-up/down – Turn on/off time (10%~90%) <100 ns – Typical power-up/down delay with driver delay included <200 ns • High temperature stability – ~1 dB gain/power variation between 0°C to +85°C across 2.4~2.5 GHz – ~3.5/1.5 dB gain/max linear power variation between 0°C to +85°C across 4.9~5.8 GHz – ~1 dB detector variation over 0°C to +85°C • Low shut-down current (< 0.1 µA) • On-chip power detection • 20 dB dynamic range on-chip power detection • Simple input/output matching • Packages available – 24-contact WQFN (4mm x 4mm) – Non-Pb (lead-free) packages available APPLICATIONS: • WLAN (IEEE 802.11a/g/b) • Japanese WLAN • HyperLAN2 • Multimedia •Home RF • Cordless phones PRODUCT DESCRIPTION The SST13LP01 is a high-gain, high-performance, dual- band power amplifier IC based on the highly-reliable InGaP/GaAs HBT technology. The SST13LP01 device can be easily configured for high- power applications with superb power-added efficiency while operating over the 802.11a/b/g frequency band for U.S., European, and Japanese markets (2.4-2.5 GHz and 4.9-5.8 GHz. The SST13LP01 has excellent linearity, typically ~4% added EVM at 21 dBm output power which is essential for 54 Mbps 802.11g operation while meeting 802.11g spec- trum mask at 23 dBm and 802.11b spectrum mask at 23 dBm. For 802.11a operation, the SST13LP01 has demon- strated typically ~4% added EVM at 20 dBm output power while meeting 802.11a spectrum mask at 22 dBm. The SST13LP01 also has wide-range (>20 dB), temperature- stable (~1 dB over 85°C), single-ended/differential power detectors which lower users’ cost on power control. The power amplifier IC also features easy board-level usage along with high-speed power-up/down control. Ultra-low reference current (total IREF <3 mA) makes the SST13LP01 controllable by an on/off switching signal directly from the baseband chip. These features, coupled with low operating current, make the SST13LP01 ideal for the final stage power amplification in both battery- powered 802.11a/b/g WLAN transmitter and access point applications. The SST13LP01 is offered in a 24-contact WQFN package. See Figure 1 for pin assignments and Table 1 for pin descriptions. 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP01 SST13LP012.4 GHz / 5 GHz Dual-Band Power Amplifier |
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