©2005 SST Communications Corp.

S71287-00-000

11/05

1

The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

Preliminary Specifications

FEATURES:

•

High Gain:

– Typically 28 dB gain across 2.4-2.5 GHz over

temperature 0°C to +85°C

– Typically 30-33 dB gain across 4.9-5.8 GHz over

temperature 0°C to +85°C

•

High linear output power:

– >29 dBm P1dB across 2.4-2.5 GHz

(Exceeding maximum rating of average output

power, never measure with CW source! Pulsed

single-tone source with <50% duty cycle is rec-

ommended.)

– Meets 802.11g OFDM ACPR requirement up to

23 dBm

– Added EVM~4% up to 21 dBm for

54 Mbps 802.11g signal

– Meets 802.11b ACPR requirement up to 23 dBm

– ~28 dBm P1dB (Pulsed single-tone signal)

across 4.9~5.8 GHz

– Meets 802.11a OFDM ACPR requirement up to

22 dBm over whole band

– Added EVM~4% up to 20 dBm for

54 Mbps 802.11a signal

•

High power-added efficiency/Low operating

current for both 802.11a/b/g applications

•

•

Low idle current

•

High-speed power-up/down

– Turn on/off time (10%~90%) <100 ns

– Typical power-up/down delay with driver delay

included <200 ns

•

High temperature stability

– ~1 dB gain/power variation between 0°C to +85°C

across 2.4~2.5 GHz

– ~3.5/1.5 dB gain/max linear power variation

between 0°C to +85°C across 4.9~5.8 GHz

– ~1 dB detector variation over 0°C to +85°C

•

Low shut-down current (< 0.1 µA)

•

On-chip power detection

•

20 dB dynamic range on-chip power detection

•

Simple input/output matching

•

Packages available

– 24-contact WQFN (4mm x 4mm)

– Non-Pb (lead-free) packages available

APPLICATIONS:

•

WLAN (IEEE 802.11a/g/b)

•

Japanese WLAN

•

HyperLAN2

•

Multimedia

•Home RF

•

Cordless phones

PRODUCT DESCRIPTION

The SST13LP01 is a high-gain, high-performance, dual-

band power amplifier IC based on the highly-reliable

InGaP/GaAs HBT technology.

The SST13LP01 device can be easily configured for high-

power applications with superb power-added efficiency

while operating over the 802.11a/b/g frequency band for

U.S., European, and Japanese markets (2.4-2.5 GHz and

4.9-5.8 GHz.

The SST13LP01 has excellent linearity, typically ~4%

added EVM at 21 dBm output power which is essential for

54 Mbps 802.11g operation while meeting 802.11g spec-

trum mask at 23 dBm and 802.11b spectrum mask at 23

dBm. For 802.11a operation, the SST13LP01 has demon-

strated typically ~4% added EVM at 20 dBm output power

while meeting 802.11a spectrum mask at 22 dBm. The

SST13LP01 also has wide-range (>20 dB), temperature-

stable (~1 dB over 85°C), single-ended/differential power

detectors which lower users’ cost on power control.

The power amplifier IC also features easy board-level

usage along with high-speed power-up/down control.

SST13LP01 controllable by an on/off switching signal

directly from the baseband chip. These features, coupled

with low operating current, make the SST13LP01 ideal

for the final stage power amplification in both battery-

powered 802.11a/b/g WLAN transmitter and access

point applications.

The SST13LP01 is offered in a 24-contact WQFN package.

See Figure 1 for pin assignments and Table 1 for pin

descriptions.

2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier

SST13LP01

SST13LP012.4 GHz / 5 GHz Dual-Band Power Amplifier