SST25VF010A datasheet(1/25 Pages) SST | 1 Mbit SPI Serial Flash

1 page

S71265-02-000

1/06

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

Data Sheet

FEATURES:

•

Single 2.7-3.6V Read and Write Operations

•

Serial Interface Architecture

– SPI Compatible: Mode 0 and Mode 3

•

33 MHz Max Clock Frequency

•

Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

•

Low Power Consumption:

– Active Read Current: 7 mA (typical)

– Standby Current: 8 µA (typical)

•

Flexible Erase Capability

– Uniform 4 KByte sectors

– Uniform 32 KByte overlay blocks

•

Fast Erase and Byte-Program:

– Chip-Erase Time: 70 ms (typical)

– Sector- or Block-Erase Time: 18 ms (typical)

– Byte-Program Time: 14 µs (typical)

•

Auto Address Increment (AAI) Programming

– Decrease total chip programming time over

Byte-Program operations

•

End-of-Write Detection

– Software Status

•

Hold Pin (HOLD#)

– Suspends a serial sequence to the memory

without deselecting the device

•

Write Protection (WP#)

– Enables/Disables the Lock-Down function of the

status register

•

Software Write Protection

– Write protection through Block-Protection bits in

status register

•

Temperature Range

– Commercial: 0°C to +70°C

– Industrial: -40°C to +85°C

– Extended: -20°C to +85°C

•

Packages Available

– 8-lead SOIC 150 mil body width

– 8-contact WSON (5mm x 6mm)

•

All non-Pb (lead-free) devices are RoHS compliant

PRODUCT DESCRIPTION

SST’s serial flash family features a four-wire, SPI-compati-

ble interface that allows for a low pin-count package occu-

pying less board space and ultimately lowering total system

costs. SST25VF010A SPI serial flash memory is manufac-

tured with SST’s proprietary, high performance CMOS

SuperFlash Technology. The split-gate cell design and

thick-oxide tunneling injector attain better reliability and

manufacturability compared with alternate approaches.

The SST25VF010A device significantly improves perfor-

mance, while lowering power consumption. The total

energy consumed is a function of the applied voltage, cur-

rent, and time of application. Since for any given voltage

range, the SuperFlash technology uses less current to pro-

gram and has a shorter erase time, the total energy con-

sumed during any Erase or Program operation is less than

alternative flash memory technologies. The SST25VF010A

device operates with a single 2.7-3.6V power supply.

The SST25VF010A device is offered in both 8-lead SOIC

and 8-contact WSON packages. See Figure 1 for the pin

assignments.

1 Mbit SPI Serial Flash

SST25VF010A

SST25VF010A1Mb Serial Peripheral Interface (SPI) flash memory

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