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| SST25VF080B |
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©2006 Silicon Storage Technology, Inc. S71296-01-000 1/06 1 The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice. Data Sheet FEATURES: • Single Voltage Read and Write Operations – 2.7-3.6V • Serial Interface Architecture – SPI Compatible: Mode 0 and Mode 3 • High Speed Clock Frequency –50 MHz • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption: – Active Read Current: 10 mA (typical) – Standby Current: 5 µA (typical) • Flexible Erase Capability – Uniform 4 KByte sectors – Uniform 32 KByte overlay blocks – Uniform 64 KByte overlay blocks • Fast Erase and Byte-Program: – Chip-Erase Time: 35 ms (typical) – Sector-/Block-Erase Time: 18 ms (typical) – Byte-Program Time: 7 µs (typical) • Auto Address Increment (AAI) Programming – Decrease total chip programming time over Byte-Program operations • End-of-Write Detection – Software polling the BUSY bit in Status Register – Busy Status readout on SO pin in AAI Mode • Hold Pin (HOLD#) – Suspends a serial sequence to the memory without deselecting the device • Write Protection (WP#) – Enables/Disables the Lock-Down function of the status register • Software Write Protection – Write protection through Block-Protection bits in status register • Temperature Range – Commercial: 0°C to +70°C – Industrial: -40°C to +85°C • Packages Available – 8-lead SOIC (200 mils) – 8-contact WSON (6mm x 5mm) • All non-Pb (lead-free) devices are RoHS compliant PRODUCT DESCRIPTION SST’s 25 series Serial Flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. The SST25VF080B devices are enhanced with improved operating frequency and even lower power consumption than the original SST25VFxxxA devices. SST25VF080B SPI serial flash memories are manufactured with SST’s proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST25VF080B devices significantly improve perfor- mance and reliability, while lowering power consumption. The devices write (Program or Erase) with a single power supply of 2.7-3.6V for SST25VF080B. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies. The SST25VF080B device is offered in both 8-lead SOIC (200 mils) and 8-contact WSON (6mm x 5mm) packages. See Figure 1 for pin assignments. 8 Mbit SPI Serial Flash SST25VF080B SST25VF080B8Mb Serial Peripheral Interface (SPI) flash memory |
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