K4M28163PH-RG datasheet(5/12 Pages) SAMSUNG

Part #	K4M28163PH-RG

Description	2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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5 / 12 page

K4M28163PH - R(B)E/G/C/F

March 2006

5

Mobile SDRAM

DC CHARACTERISTICS

Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25

°C ~ 85°C for Extended, -25°C ~ 70°C for Commercial)

NOTES:

1. Measured with outputs open.

2. Refresh period is 64ms.

3. Internal TCSR can be supported.

In comercial Temp : 45

°C/Max 70°C. In extended Temp : 45°C/Max 85°C.

4. It has +/-5

°C tolerance.

5. K4M28163PH-S(D)E/C**

6. K4M28163PH-S(D)G/F**

7. DPD(Deep Power Down) function is an optional feature and it will be enabled upon request.

Please contact Samsung for more information.

8. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).

Parameter

Symbol

Test Condition

Version

Unit

Note

-75

-90

-1L

Operating Current

(One Bank Active)

ICC1

Burst length = 1

tRC

≥ tRC(min)

IO = 0 mA

40

35

mA

1

Precharge Standby Current in

power-down mode

ICC2P

CKE

≤ VIL(max), tCC = 10ns

0.3

mA

ICC2PS

CKE & CLK

≤ VIL(max), tCC = ∞

0.3

Precharge Standby Current

in non power-down mode

ICC2N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

10

mA

ICC2NS

CKE

≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

1

Active Standby Current

in power-down mode

ICC3P

CKE

≤ VIL(max), tCC = 10ns

5

mA

ICC3PS

CKE & CLK

≤ VIL(max), tCC = ∞

1

Active Standby Current

in non power-down mode

(One Bank Active)

ICC3N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

20

mA

ICC3NS

CKE

≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

10

mA

Operating Current

(Burst Mode)

ICC4

IO = 0 mA

Page burst

4Banks Activated

tCCD = 2CLKs

50

45

mA

1

Refresh Current

ICC5

tARFC

≥ tARFC(min)

90

85

mA

2

Self Refresh Current

ICC6

CKE

≤ 0.2V

Internal TCSR

45 *4

85/70

°C

3

-E/C

Full Array

150

250

uA

5

1/2 of Full

140

210

1/4 of Full

135

190

-G/F

Full Array

100

200

6

1/2 of Full

90

160

1/4 of Full

85

140

Deep Power Down Current

ICC8

CKE

≤ 0.2V

10

uA

7

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