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K4M511633C-RF75 Datasheet(PDF) 7 Page - Samsung semiconductor |
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K4M511633C-RF75 Datasheet(HTML) 7 Page - Samsung semiconductor |
7 / 12 page K4M511633C - R(B)N/G/L/F March 2006 7 Mobile SDRAM OPERATING AC PARAMETER (AC operating conditions unless otherwise noted) NOTES: 1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and then rounding off to the next higher integer. 2. Minimum delay is required to complete write. 3. Minimum tRDL=2CLK and tDAL(= tRDL + tRP) is required to complete both of last data write command(tRDL) and precharge command(tRP). 4. All parts allow every cycle column address change. 5. In case of row precharge interrupt, auto precharge and read burst stop. 6. Maximum burst refresh cycle : 8 Parameter Symbol Version Unit Note -75 -1H -1L Row active to row active delay tRRD(min) 15 18 18 ns 1 RAS to CAS delay tRCD(min) 18 18 24 ns 1 Row precharge time tRP(min) 18 18 24 ns 1 Row active time tRAS(min) 45 50 60 ns 1 tRAS(max) 100 us Row cycle time tRC(min) 63 68 84 ns 1,6 Last data in to row precharge tRDL(min) 2 CLK 2 Last data in to Active delay tDAL(min) tRDL + tRP - 3 Last data in to new col. address delay tCDL(min) 1 CLK 2 Last data in to burst stop tBDL(min) 1 CLK 2 Col. address to col. address delay tCCD(min) 1 CLK 4 Number of valid output data CAS latency=3 2 ea 5 Number of valid output data CAS latency=2 1 Number of valid output data CAS latency=1 0 |
Similar Part No. - K4M511633C-RF75 |
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