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2N6059_03 Datasheet(PDF) 1 Page - STMicroelectronics

Part No. 2N6059_03
Description  SILICON NPN POWER DARLINGTON TRANSISTOR
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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2N6059
SILICON NPN POWER DARLINGTON TRANSISTOR
s
STMicrolectronics PREFERRED
SALESTYPE
s
HIGH GAIN
s
NPN DARLINGTON
s
HIGH CURRENT
s
HIGH DISSIPATION
s
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
s
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The 2N6059 is a silicon Epitaxial-Base NPN
transistor in monolithic Darlington configuration
mounted in Jedec TO-3 metal case.
It is inteded for use in power linear and low
frequency switching applications.
INTERNAL SCHEMATIC DIAGRAM
February 2003
1
2
TO-3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage (IE = 0)
100
V
VCEX
Collector-Emitter Voltage (VBE = -1.5V)
100
V
VCEO
Collector-Emitter Voltage (IB = 0)
100
V
VEBO
Emitter-Base Voltage (IC = 0)
5
V
IC
Collector Current
12
A
ICM
Collector Peak Current (tp < 5 ms)
20
A
IB
Base Current
0.2
A
Ptot
Total Dissipation at Tc
≤ 25 oC
150
W
Tstg
Storage Temperature
-65 to 200
oC
Tj
Max. Operating Junction Temperature
200
oC
R1 Typ. = 6 K
R2 Typ. = 55
®
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