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2N6059_03 Datasheet(PDF) 2 Page - STMicroelectronics

Part No. 2N6059_03
Description  SILICON NPN POWER DARLINGTON TRANSISTOR
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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THERMAL DATA
Rthj-case
Thermal Resistance Junction-case
Max
1.17
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICEX
Collector Cut-off
Current (VBE = -1.5V)
VCE = rated VCEX
VCE = rated VCEX
Tc = 150
o C
0.5
5
mA
mA
ICEO
Collector Cut-off
Current (IB = 0)
VCE = 50 V
1
mA
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 5 V
2
mA
VCEO(sus)
∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 100 mA
100
V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 6 A
IB = 24 mA
IC = 12 A
IB = 120 mA
2
3
V
V
VBE(sat)
∗ Base-Emitter
Saturation Voltage
IC = 12 A
IB = 120 mA
4
V
VBE
Base-Emitter Voltage
IC = 6 A
VCE = 3 V
2.8
V
hFE
DC Current Gain
IC = 6 A
VCE = 3 V
IC = 12 A
VCE = 3 V
750
100
fT
Transition frequency
IC = 5 A
VCE = 3 V
f =1 MHz
4
MHz
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2N6059
2/4




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