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SST34HF164G-70-4C-LBK Datasheet(PDF) 1 Page - Silicon Storage Technology, Inc |
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SST34HF164G-70-4C-LBK Datasheet(HTML) 1 Page - Silicon Storage Technology, Inc |
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1 / 31 page  ©2004 Silicon Storage Technology, Inc. S71276-00-000 11/04 1 The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. ComboMemory is a trademark of Silicon Storage Technology, Inc. These specifications are subject to change without notice. Preliminary Specifications FEATURES: • Flash Organization: 1M x16 – 16 Mbit: 12 Mbit + 4 Mbit • Concurrent Operation – Read from or Write to SRAM while Erase/Program Flash • SRAM Organization: – 2 Mbit:128K x16 – 4 Mbit: 256K x16 • Single 2.7-3.3V Read and Write Operations • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption: (typical values @ 5 MHz) – Active Current: Flash 10 mA (typical) SRAM 6 mA (typical) – Standby Current: 10 µA (typical) • Hardware Sector Protection (WP#) – Protects 4 outer most sectors (4 KWord) in the larger bank by holding WP# low and unprotects by holding WP# high • Hardware Reset Pin (RST#) – Resets the internal state machine to reading data array • Sector-Erase Capability – Uniform 2 KWord sectors • Block-Erase Capability – Uniform 32 KWord blocks • Read Access Time – Flash: 70 ns –SRAM: 70 ns • Erase-Suspend / Erase-Resume Capabilities • Latched Address and Data • Fast Erase and Word-Program (typical): – Sector-Erase Time: 18 ms – Block-Erase Time: 18 ms – Chip-Erase Time: 35 ms – Program Time: 7 µs • Automatic Write Timing – Internal VPP Generation • End-of-Write Detection – Toggle Bit – Data# Polling • CMOS I/O Compatibility • JEDEC Standard Command Set • Packages Available – 48-ball LFBGA (6mm x 8mm) – 48-ball LBGA (10mm x 12mm) – Non-Pb (lead-free) packages available PRODUCT DESCRIPTION The SST34HF16xG ComboMemory devices integrate a 1M x16 CMOS flash memory bank with either 128K x16 or 256K x16 CMOS SRAM memory bank in a multi-chip package (MCP). These devices are fabricated using SST’s proprietary, high-performance CMOS SuperFlash technol- ogy incorporating the split-gate cell design and thick-oxide tunneling injector to attain better reliability and manufactur- ability compared with alternate approaches. The SST34HF16xG devices are ideal for applications such as cellular phones, GPS devices, PDAs, and other portable electronic devices in a low power and small form factor sys- tem. The SuperFlash technology provides fixed Erase and Pro- gram times, independent of the number of Erase/Program cycles that have occurred. Therefore, the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Pro- gram cycles. The SST34HF16xG devices offer a guaran- teed endurance of 10,000 cycles. Data retention is rated at greater than 100 years. With high-performance Program operations, the flash memory banks provide a typical Pro- gram time of 7 µsec. The entire flash memory bank can be erased and programmed word-by-word in 4 seconds (typi- cally) for the SST34HF16xG, when using interface features such as Toggle Bit or Data# Polling to indicate the comple- tion of Program operation. To protect against inadvertent flash write, the SST34HF16xG devices contain on-chip hardware and software data protection schemes. The flash and SRAM operate as two independent memory banks with respective bank enable signals. The memory bank selection is done by two bank enable signals. The SRAM bank enable signal, BES#, selects the SRAM bank. The flash memory bank enable signal, BEF#, has to be used with Software Data Protection (SDP) command sequence when controlling the Erase and Program opera- tions in the flash memory bank. The memory banks are superimposed in the same memory address space where they share common address lines, data lines, WE# and OE# which minimize power consumption and area. See Figure 1 for memory organization. 16 Mbit Dual-Bank Flash + 2/4 Mbit SRAM ComboMemory SST34HF162G / SST34HF164G SST34HF162G/164G16Mb Dual-Bank Flash + 2/4 Mb SRAM MCP ComboMemory |
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