Electronic Components Datasheet Search |
|
K8D1716UBB-YI09 Datasheet(PDF) 11 Page - Samsung semiconductor |
|
K8D1716UBB-YI09 Datasheet(HTML) 11 Page - Samsung semiconductor |
11 / 40 page FLASH MEMORY K8D1716UTB / K8D1716UBB Revision 0.0 July 2004 11 Figure 3. Autoselect Operation ( by command sequence method ) WE 555H/ AAAH 2AAH/ 555H 555H/ AAAH AAH 55H 90H 00H/ 01H/ ECH Manufacturer Code Device Code A19 ∼A0(x16)/* DQ15 ∼DQ0 F0H Return to Read Mode Write (Program/Erase) Mode The K8D1716U executes its program/erase operations by writing commands into the command register. In order to write the com- mands to the register, CE and WE must be low and OE must be high. Addresses are latched on the falling edge of CE or WE (which- ever occurs last) and the data are latched on the rising edge of CE or WE (whichever occurs first). The device uses standard microprocessor write timing. Program The K8D1716U can be programmed in units of a word or a byte. Programming is writing 0's into the memory array by executing the Internal Program Routine. In order to perform the Internal Program Routine, a four-cycle command sequence is necessary. The first two cycles are unlock cycles. The third cycle is assigned for the program setup command. In the last cycle, the address of the mem- ory location and the data to be programmed at that location are written. The device automatically generates adequate program pulses and verifies the programmed cell margin by the Internal Program Routine. During the execution of the Routine, the system is not required to provide further controls or timings. During the Internal Program Routine, commands written to the device will be ignored. Note that a hardware reset during a program operation will cause data corruption at the corresponding location. Figure 4. Program Command Sequence WE 555H/ AAAH 2AAH/ 555H 555H/ AAAH AAH 55H A0H Program Program Program Start DQ15-DQ0 Address Data RY/BY A9 VID 00H 01H ECH 22A0H or 22A2H Manufacturer Code Device Code A6,A1,A0* DQ15-DQ0 Figure 2. Autoselect Operation ( by high voltage method ) Return to Read Mode V = VIH or VIL 22A0H or 22A2H Note : The addresses other than A0 , A1 and A6 are Don ′t care. Please refer to Table 9 for device code. Note : The 3rd Cycle and 4th Cycle address must include the same bank address. Please refer to Table 9 for device code. ( K8D1716U) (K8D1716U) A19 ∼A-1(x8) A19 ∼A0(x16)/ A19 ∼A-1(x8) 00H 02H |
Similar Part No. - K8D1716UBB-YI09 |
|
Similar Description - K8D1716UBB-YI09 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |