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1N5819 Datasheet(PDF) 1 Page - ON Semiconductor |
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1N5819 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 7 page © Semiconductor Components Industries, LLC, 2006 July, 2006 − Rev. 10 1 Publication Order Number: 1N5817/D 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. Features • Extremely Low VF • Low Stored Charge, Majority Carrier Conduction • Low Power Loss/High Efficiency • These are Pb−Free Devices* Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 0.4 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260 °C Max for 10 Seconds • Polarity: Cathode Indicated by Polarity Band • ESD Ratings: Machine Model = C (>400 V) Human Body Model = 3B (>8000 V) *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS Preferred devices are recommended choices for future use and best overall value. See detailed ordering and shipping information on page 6 of this data sheet. ORDERING INFORMATION http://onsemi.com MARKING DIAGRAM A =Assembly Location 1N581x =Device Number x= 7, 8, or 9 YY =Year WW =Work Week G =Pb−Free Package A 1N581x YYWW G G (Note: Microdot may be in either location) AXIAL LEAD CASE 59 STYLE 1 |
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