MJD350 datasheet(2/5 Pages) STMICROELECTRONICS

Part #	MJD350

Description	COMPLEMENTARY SILICON POWER TRANSISTORS

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

8.33

100

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (vBE = 0)

VCB = 300 V

0.1

mA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 3 V

0.1

mA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 1 mA

300

V

hFE

∗

DC Current Gain

IC = 50 mA

VCE = 10 V

30

240

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %

For PNP type voltage and current values are negative.

Safe Operating Area

Derating Curve

MJD340 / MJD350

2/5

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