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1N5956BG Datasheet(PDF) 3 Page - ON Semiconductor |
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1N5956BG Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 8 page 1N5913B Series http://onsemi.com 3 ELECTRICAL CHARACTERISTICS (TL = 30°C unless otherwise noted, VF = 1.5 V Max @ IF = 200 mAdc for all types) Device† (Note 1) Device Marking Zener Voltage (Note 2) Zener Impedance (Note 3) Leakage Current IZM VZ (Volts) @ IZT ZZT @ IZT ZZK @ IZK IR @ VR Min Nom Max mA W W mA mA Max Volts mA 1N5913B, G 1N5913B 3.14 3.3 3.47 113.6 10 500 1 100 1 454 1N5917B, G 1N5917B 4.47 4.7 4.94 79.8 5 500 1 5 1.5 319 1N5919B, G 1N5919B 5.32 5.6 5.88 66.9 2 250 1 5 3 267 1N5920B, G 1N5920B 5.89 6.2 6.51 60.5 2 200 1 5 4 241 1N5921B, G 1N5921B 6.46 6.8 7.14 55.1 2.5 200 1 5 5.2 220 1N5923B, G 1N5923B 7.79 8.2 8.61 45.7 3.5 400 0.5 5 6.5 182 1N5924B, G 1N5924B 8.65 9.1 9.56 41.2 4 500 0.5 5 7 164 1N5925B, G 1N5925B 9.50 10 10.50 37.5 4.5 500 0.25 5 8 150 1N5926B, G 1N5926B 10.45 11 11.55 34.1 5.5 550 0.25 1 8.4 136 1N5927B, G 1N5927B 11.40 12 12.60 31.2 6.5 550 0.25 1 9.1 125 1N5929B, G 1N5929B 14.25 15 15.75 25.0 9 600 0.25 1 11.4 100 1N5930B, G 1N5930B 15.20 16 16.80 23.4 10 600 0.25 1 12.2 93 1N5931B, G 1N5931B 17.10 18 18.90 20.8 12 650 0.25 1 13.7 83 1N5932B, G 1N5932B 19.00 20 21.00 18.7 14 650 0.25 1 15.2 75 1N5933B, G 1N5933B 20.90 22 23.10 17.0 17.5 650 0.25 1 16.7 68 1N5934B, G 1N5934B 22.80 24 25.20 15.6 19 700 0.25 1 18.2 62 1N5935B, G 1N5935B 25.65 27 28.35 13.9 23 700 0.25 1 20.6 55 1N5936B, G 1N5936B 28.50 30 31.50 12.5 28 750 0.25 1 22.8 50 1N5937B, G 1N5937B 31.35 33 34.65 11.4 33 800 0.25 1 25.1 45 1N5938B, G 1N5938B 34.20 36 37.80 10.4 38 850 0.25 1 27.4 41 1N5940B, G 1N5940B 40.85 43 45.15 8.7 53 950 0.25 1 32.7 34 1N5941B, G 1N5941B 44.65 47 49.35 8.0 67 1000 0.25 1 35.8 31 1N5942B, G 1N5942B 48.45 51 53.55 7.3 70 1100 0.25 1 38.8 29 1N5943B, G 1N5943B 53.20 56 58.80 6.7 86 1300 0.25 1 42.6 26 1N5944B, G 1N5944B 58.90 62 65.10 6.0 100 1500 0.25 1 47.1 24 1N5946B, G 1N5946B 71.25 75 78.75 5.0 140 2000 0.25 1 56 20 1N5947B, G 1N5947B 77.90 82 86.10 4.6 160 2500 0.25 1 62.2 18 1N5948B, G 1N5948B 86.45 91 95.55 4.1 200 3000 0.25 1 69.2 16 1N5950B, G 1N5950B 104.5 110 115.5 3.4 300 4000 0.25 1 83.6 13 1N5951B, G 1N5951B 114 120 126 3.1 380 4500 0.25 1 91.2 12 1N5952B, G 1N5952B 123.5 130 136.5 2.9 450 5000 0.25 1 98.8 11 1N5953B, G 1N5953B 142.5 150 157.5 2.5 600 6000 0.25 1 114 10 1N5954B, G 1N5954B 152 160 168 2.3 700 6500 0.25 1 121.6 9 1N5955B, G 1N5955B 171 180 189 2.1 900 7000 0.25 1 136.8 8 1N5956B, G 1N5956B 190 200 210 1.9 1200 8000 0.25 1 152 7 Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. †The “G’’ suffix indicates Pb−Free package available. 1. TOLERANCE AND TYPE NUMBER DESIGNATION Tolerance designation − device tolerance of ±5% are indicated by a “B” suffix. 2. ZENER VOLTAGE (VZ) MEASUREMENT ON Semiconductor guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (TL) at 30°C ±1°C, 3/8 ″ from the diode body. 3. ZENER IMPEDANCE (ZZ) DERIVATION The zener impedance is derived from 60 seconds AC voltage, which results when an AC current having an rms value equal to 10% of the DC zener current (IZT or IZK) is superimposed on IZT or IZK. |
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