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STD95N4F3 Datasheet(PDF) 5 Page - STMicroelectronics |
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STD95N4F3 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 14 page  STD95N4F3 - STP95N4F3 - STU95N4F3 Electrical characteristics 5/14 Table 5. Switching on/off (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD=20V, ID= 40A, RG=4.7Ω, VGS=10V (see Figure 15) 15 50 ns ns td(off) tf Turn-off delay time Fall time VDD=20V, ID= 40A, RG=4.7Ω, VGS=10V (see Figure 15) 40 15 ns ns Table 6. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 80 320 A A VSD (2) 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD=80A, VGS=0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=80A, di/dt = 100A/µs, VDD=30V, Tj=150°C (see Figure 14) 45 60 2.8 ns nC A |
Similar Part No. - STD95N4F3 |
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Similar Description - STD95N4F3 |
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