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BUK436W-800B Datasheet(PDF) 1 Page - NXP Semiconductors |
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BUK436W-800B Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 7 page Philips Semiconductors Product specification PowerMOS transistor BUK436W-800A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK436 -800A -800B The device is intended for use in V DS Drain-source voltage 800 800 V Switched Mode Power Supplies I D Drain current (DC) 4 3.5 A (SMPS), motor control, welding, P tot Total power dissipation 125 125 W DC/DC and AC/DC converters, and R DS(ON) Drain-source on-state 3 4 Ω in general purpose switching resistance applications. PINNING - SOT429 (TO247) PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 gate 2 drain 3 source tab drain LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DS Drain-source voltage - - 800 V V DGR Drain-gate voltage R GS = 20 kΩ - 800 V ±V GS Gate-source voltage - - 30 V -800A -800B I D Drain current (DC) T mb = 25 ˚C - 4.0 3.5 A I D Drain current (DC) T mb = 100 ˚C - 2.5 2.2 A I DM Drain current (pulse peak value) T mb = 25 ˚C - 16 14 A P tot Total power dissipation T mb = 25 ˚C - 125 W T stg Storage temperature - - 55 150 ˚C T j Junction temperature - - 150 ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance junction to - - 1.0 K/W mounting base R th j-a Thermal resistance junction to - 45 - K/W ambient 2 3 1 d g s February 1998 1 Rev 1.000 |
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