Bi−Directional TVS

V

I

1SMB10CAT3 Series

http://onsemi.com

2

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Power Dissipation (Note 1)

600

W

Measured Zero Lead Length (Note 2)

Derate Above 75

°C

Thermal Resistance from Junction−to−Lead

3.0

40

25

W

mW/

°C

°C/W

Derate Above 25

°C

Thermal Resistance from Junction−to−Ambient

0.55

4.4

226

W

mW/

°C

°C/W

Operating and Storage

Temperature Range

−65 to +150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. 10 X 1000

ms, non−repetitive

2. 1

″ square copper pad, FR−4 board

3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec

*Please see 1SMB5.0AT3 to 1SMB170AT3 for Unidirectional devices

ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Maximum Reverse Peak Pulse Current

Working Peak Reverse Voltage

Test Current