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BUK444-200A Datasheet(PDF) 5 Page - NXP Semiconductors |
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BUK444-200A Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 7 page Philips Semiconductors Product Specification PowerMOS transistor BUK444-200A/B Fig.11. Sub-threshold drain current. I D = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS Fig.12. Typical capacitances, C iss, Coss, Crss. C = f(V DS); conditions: VGS = 0 V; f = 1 MHz Fig.13. Typical turn-on gate-charge characteristics. V GS = f(QG); conditions: ID = 9 A; parameter VDS Fig.14. Typical reverse diode current. I F = f(VSDS); conditions: VGS = 0 V; parameter Tj Fig.15. Normalised avalanche energy rating. W DSS% = f(Ths); conditions: ID = 9 A Fig.16. Avalanche energy test circuit. 0 1 2 3 4 VGS / V ID / A 1E-01 1E-02 1E-03 1E-04 1E-05 1E-06 SUB-THRESHOLD CONDUCTION typ 2 % 98 % 0 1 2 BUK454-200A VSDS / V IF / A 20 15 10 5 0 25 Tj / C = 150 0 20 40 VDS / V C / pF Ciss Coss Crss 10 100 1000 10000 BUK4y4-200 20 40 60 80 100 120 140 Ths / C 120 110 100 90 80 70 60 50 40 30 20 10 0 WDSS% 0 4 8 12 16 20 24 28 QG / nC VGS / V 12 10 8 6 4 2 0 VDS / V =40 160 BUK454-200 L T.U.T. VDD RGS R 01 VDS -ID/100 + - shunt VGS 0 W DSS = 0.5 ⋅ LID 2 ⋅ BV DSS/(BVDSS − VDD) April 1993 5 Rev 1.100 |
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