BUK444-200A datasheet(5/7 Pages) PHILIPS

Part #	BUK444-200A

Description	PowerMOS transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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Philips Semiconductors

Product Specification

PowerMOS transistor

BUK444-200A/B

Fig.11. Sub-threshold drain current.

I

D = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS

Fig.12. Typical capacitances, C

iss, Coss, Crss.

C = f(V

DS); conditions: VGS = 0 V; f = 1 MHz

Fig.13. Typical turn-on gate-charge characteristics.

V

GS = f(QG); conditions: ID = 9 A; parameter VDS

Fig.14. Typical reverse diode current.

I

F = f(VSDS); conditions: VGS = 0 V; parameter Tj

Fig.15. Normalised avalanche energy rating.

W

DSS% = f(Ths); conditions: ID = 9 A

Fig.16. Avalanche energy test circuit.

0

1

2

3

4

VGS / V

ID / A

1E-01

1E-02

1E-03

1E-04

1E-05

1E-06

SUB-THRESHOLD CONDUCTION

typ

2 %

98 %

0

1

2

BUK454-200A

VSDS / V

IF / A

20

15

10

5

0

25

Tj / C = 150

0

20

40

VDS / V

C / pF

Ciss

Coss

Crss

10

100

1000

10000

BUK4y4-200

20

40

60

80

100

120

140

Ths / C

120

110

100

90

80

70

60

50

40

30

20

10

0

WDSS%

0

4

8

12

16

20

24

28

QG / nC

VGS / V

12

10

8

6

4

2

0

VDS / V =40

160

BUK454-200

L

T.U.T.

VDD

RGS

R 01

VDS

-ID/100

+

-

shunt

VGS

0

W

DSS = 0.5 ⋅ LID

2

⋅ BV

DSS/(BVDSS − VDD)

April 1993

5

Rev 1.100

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BUK444-200A Datasheet(PDF) 5 Page - NXP Semiconductors

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