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2N3903_07 Datasheet(PDF) 2 Page - ON Semiconductor

Part No. 2N3903_07
Description  General Purpose Transistors NPN Silicon
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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2N3903, 2N3904
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2) (IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
Vdc
Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0)
V(BR)CBO
60
Vdc
Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
V(BR)EBO
6.0
Vdc
Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)
IBL
50
nAdc
Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)
ICEX
50
nAdc
ON CHARACTERISTICS
DC Current Gain (Note 2)
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
2N3903
2N3904
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
2N3903
2N3904
(IC = 10 mAdc, VCE = 1.0 Vdc)
2N3903
2N3904
(IC = 50 mAdc, VCE = 1.0 Vdc)
2N3903
2N3904
(IC = 100 mAdc, VCE = 1.0 Vdc)
2N3903
2N3904
hFE
20
40
35
70
50
100
30
60
15
30
150
300
Collector −Emitter Saturation Voltage (Note 2)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc
VCE(sat)
0.2
0.3
Vdc
Base −Emitter Saturation Voltage (Note 2)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
0.65
0.85
0.95
Vdc
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
2N3903
2N3904
fT
250
300
MHz
Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
4.0
pF
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
8.0
pF
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
2N3903
2N3904
hie
1.0
1.0
8.0
10
k
W
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
2N3903
2N3904
hre
0.1
0.5
5.0
8.0
X 10−4
Small−Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
2N3903
2N3904
hfe
50
100
200
400
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hoe
1.0
40
mmhos
Noise Figure
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k W, f = 1.0 kHz)
2N3903
2N3904
NF
6.0
5.0
dB
SWITCHING CHARACTERISTICS
Delay Time
(VCC = 3.0 Vdc, VBE = 0.5 Vdc,
IC = 10 mAdc, IB1 = 1.0 mAdc)
td
35
ns
Rise Time
tr
35
ns
Storage Time
(VCC = 3.0 Vdc, IC = 10 mAdc,
2N3903
IB1 = IB2 = 1.0 mAdc)
2N3904
ts
175
200
ns
Fall Time
tf
50
ns
2. Pulse Test: Pulse Width
v 300 ms; Duty Cycle v 2%.




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