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2N3773G Datasheet(PDF) 1 Page - ON Semiconductor |
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2N3773G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2004 July, 2004 − Rev. 10 1 Publication Order Number: 2N3773/D NPN 2N3773*, PNP 2N6609 Preferred Device Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBase t power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, DC−DC converters or inverters. Features • Pb−Free Packages are Available** • High Safe Operating Area (100% Tested) 150 W @ 100 V • Completely Characterized for Linear Operation • High DC Current Gain and Low Saturation Voltage hFE = 15 (Min) @ 8.0 A, 4.0 V VCE(sat) = 1.4 V (Max) @ IC = 8.0 A, IB = 0.8 A • For Low Distortion Complementary Designs MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector − Emitter Voltage VCEO 140 Vdc Collector − Emitter Voltage VCEX 160 Vdc Collector − Base Voltage VCBO 160 Vdc Emitter − Base Voltage VEBO 7 Vdc Collector Current − Continuous − Peak (Note 2) IC 16 30 Adc Base Current − Continuous − Peak (Note 2) IB 4 15 Adc Total Power Dissipation @ TA = 25°C Derate above 25 °C PD 150 0.855 W W/ °C Operating and Storage Junction Temperature Range TJ, Tstg − 65 to +200 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Indicates JEDEC Registered Data. 2. Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.17 °C/W **For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. TO−204 CASE 1−07 *Preferred devices are recommended choices for future use and best overall value. See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ORDERING INFORMATION http://onsemi.com MARKING DIAGRAM 16 A COMPLEMENTARY POWER TRANSISTORS 140 V, 150 W 2Nxxxx MEX AYYWW xxxx = 3773 or 6609 A = Assembly Location YY = Year WW = Work Week |
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