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2N4123_07 Datasheet(PDF) 2 Page - ON Semiconductor

Part No. 2N4123_07
Description  General Purpose Transistors NPN Silicon
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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2N4123, 2N4124
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IE = 0)
2N4123
2N4124
V(BR)CEO
30
25
−
−
Vdc
Collector−Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
2N4123
2N4124
V(BR)CBO
40
30
−
−
Vdc
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
−
Vdc
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
ICBO
−
50
nAdc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO
−
50
nAdc
ON CHARACTERISTICS
DC Current Gain (Note 1)
(IC = 2.0 mAdc, VCE = 1.0 Vdc)
2N4123
2N4124
(IC = 50 mAdc, VCE = 1.0 Vdc)
2N4123
2N4124
hFE
50
120
25
60
150
360
−
−
−
Collector−Emitter Saturation Voltage (Note 1)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
−
0.3
Vdc
Base−Emitter Saturation Voltage (Note 1)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
−
0.95
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
2N4123
2N4124
fT
250
300
−
−
MHz
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
−
8.0
pF
Collector−Base Capacitance
(IE = 0, VCB = 5.0 V, f = 1.0 MHz)
Ccb
−
4.0
pF
Small−Signal Current Gain
(IC = 2.0 mAdc, VCE = 10 Vdc, RS = 10 k W, f = 1.0 kHz)
2N4123
2N4124
hfe
50
120
200
480
−
Current Gain − High Frequency
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
2N4123
2N4124
(IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz)
2N4123
(IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz)
2N4124
|hfe|
2.5
3.0
50
120
−
−
200
480
−
Noise Figure
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k W, f = 1.0 kHz)
2N4123
2N4124
NF
−
−
6.0
5.0
dB
1. Pulse Test: Pulse Width = 300
ms, Duty Cycle = 2.0%.




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