2N5087_07 datasheet(2/7 Pages) ONSEMI

Part #	2N5087

Description	Amplifier Transistor PNP Silicon

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2N5087

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 1)

(IC = 1.0 mAdc, IB = 0)

V(BR)CEO

50

−

Vdc

Collector−Base Breakdown Voltage

(IC = 100 mAdc, IE = 0)

V(BR)CBO

50

−

Vdc

Collector Cutoff Current

(VCB = 35 Vdc, IE = 0)

ICBO

−

50

nAdc

Emitter Cutoff Current

(VEB = 3.0 Vdc, IC = 0)

IEBO

−

50

nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 100 mAdc, VCE = 5.0 Vdc)

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

(IC = 10 mAdc, VCE = 5.0 Vdc) (Note 1)

hFE

250

800

−

Collector−Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

VCE(sat)

−

0.3

Vdc

Base−Emitter On Voltage

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

VBE(on)

−

0.85

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 500 mAdc, VCE = 5.0 Vdc, f = 20 MHz)

fT

40

−

MHz

Collector−Base Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

Ccb

−

4.0

pF

Small−Signal Current Gain

(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)

hfe

250

900

−

Noise Figure

(IC = 20 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)

(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 3.0 kW, f = 1.0 kHz)

NF

−

2.0

dB

1. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2.0%.

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