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BUK444 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BUK444 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 7 page Philips Semiconductors Product Specification PowerMOS transistor BUK444-200A/B STATIC CHARACTERISTICS T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS Drain-source breakdown V GS = 0 V; ID = 0.25 mA 200 - - V voltage V GS(TO) Gate threshold voltage V DS = VGS; ID = 1 mA 2.1 3.0 4.0 V I DSS Zero gate voltage drain current V DS = 200 V; VGS = 0 V; Tj = 25 ˚C - 1 10 µA I DSS Zero gate voltage drain current V DS = 200 V; VGS = 0 V; Tj =125 ˚C - 0.1 1.0 mA I GSS Gate source leakage current V GS = ±30 V; VDS = 0 V - 10 100 nA R DS(ON) Drain-source on-state V GS = 10 V; BUK444-200A - 0.35 0.4 Ω resistance I D = 3.5 A BUK444-200B - 0.4 0.5 Ω DYNAMIC CHARACTERISTICS T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT g fs Forward transconductance V DS = 25 V; ID = 3.5 A 3.5 5.0 - S C iss Input capacitance V GS = 0 V; VDS = 25 V; f = 1 MHz - 700 850 pF C oss Output capacitance - 100 160 pF C rss Feedback capacitance - 50 80 pF t d on Turn-on delay time V DD = 30 V; ID = 2.9 A; - 12 20 ns t r Turn-on rise time V GS = 10 V; RGS = 50 Ω; - 45 70 ns t d off Turn-off delay time R gen = 50 Ω - 80 120 ns t f Turn-off fall time - 40 60 ns L d Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH from package to centre of die L s Internal source inductance Measured from source lead 6 mm - 7.5 - nH from package to source bond pad ISOLATION LIMITING VALUE & CHARACTERISTIC T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V isol Repetitive peak voltage from all R.H. ≤ 65% ; clean and dustfree - 1500 V three terminals to external heatsink C isol Capacitance from T2 to external f = 1 MHz - 12 - pF heatsink REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I DR Continuous reverse drain - - - 5.3 A current I DRM Pulsed reverse drain current - - - 21 A V SD Diode forward voltage I F = 5.3 A ; VGS = 0 V - 1.1 1.3 V t rr Reverse recovery time I F = 5.3 A; -dIF/dt = 100 A/µs; - 150 - ns Q rr Reverse recovery charge V GS = 0 V; VR = 30 V - 0.9 - µC April 1993 2 Rev 1.100 |
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