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BUK444 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BUK444 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 7 page Philips Semiconductors Product Specification PowerMOS transistor BUK444-200A/B AVALANCHE LIMITING VALUE T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT W DSS Drain-source non-repetitive I D = 9 A ; VDD ≤ 100 V ; - - 50 mJ unclamped inductive turn-off V GS = 10 V ; RGS = 50 Ω energy Fig.1. Normalised power dissipation. PD% = 100 ⋅P D/PD 25 ˚C = f(Ths) Fig.2. Normalised continuous drain current. ID% = 100 ⋅I D/ID 25 ˚C = f(Ths); conditions: VGS ≥ 10 V Fig.3. Safe operating area. T hs = 25 ˚C I D & IDM = f(VDS); IDM single pulse; parameter tp Fig.4. Transient thermal impedance. Z th j-hs = f(t); parameter D = tp/T 0 20 40 60 80 100 120 140 Ths / C PD% Normalised Power Derating 120 110 100 90 80 70 60 50 40 30 20 10 0 with heatsink compound 1 10 100 1000 10000 VDS / V 100 10 1 0.1 BUK444-200A,B ID / A tp = 10 us 100 us 1 ms 10 ms 100 ms DC A B RDS(ON) = VDS/ID 0 20 40 60 80 100 120 140 Ths / C ID% Normalised Current Derating 120 110 100 90 80 70 60 50 40 30 20 10 0 with heatsink compound 1E-07 1E-05 1E-03 1E-01 1E+01 t / s Zth / (K/W) 10 1 0.1 0.01 0 0.5 0.2 0.1 0.05 0.02 D = BUKx44-lv D = tp tp T T P t D April 1993 3 Rev 1.100 |
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