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BUK446-800B Datasheet(PDF) 5 Page - NXP Semiconductors |
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BUK446-800B Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 7 page Philips Semiconductors Product Specification PowerMOS transistor BUK446-800A/B Fig.13. Typical turn-on gate-charge characteristics. V GS = f(QG); conditions: ID = 4 A; parameter VDS Fig.14. Typical reverse diode current. I F = f(VSDS); conditions: VGS = 0 V; parameter Tj 0 20 40 QG / nC VGS / V 12 10 8 6 4 2 0 VDS / V =160 640 BUK4y6-800 0 1 2 BUK4y6-800A VSDS / V IF / A 10 5 0 Tj / C = 150 25 May 1995 5 Rev 1.200 |
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