© Semiconductor Components Industries, LLC, 2006

October, 2006 − Rev. 9

1

Publication Order Number:

2N5655/D

2N5655, 2N5657

Plastic NPN Silicon

High−Voltage Power

Transistor

These devices are designed for use in line−operated equipment such

as audio output amplifiers; low−current, high−voltage converters; and

AC line relays.

Features

Rating

Symbol

2N5655

2N5657

Unit

Collector−Emitter Voltage

250

350

Vdc

Collector−Base Voltage

275

375

Vdc

Emitter−Base Voltage

6.0

Vdc

Collector Current −

Continuous

Peak

0.5

1.0

Adc

Base Current

1.0

Adc

Derate above 25

°C

20

0.16

W

W/

°C

Operating and Storage Junction

Temperature Range

– 65 to + 150

°C/W

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance,

Junction−to−Case

6.25

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Indicates JEDEC registered data.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

0.5 AMPERE

POWER TRANSISTORS

NPN SILICON

250−350 VOLTS, 20 WATTS

MARKING DIAGRAM

TO−225AA

CASE 77−09

STYLE 1

Y

= Year

WW

= Work Week

2N565x

= Device Code

x = 5 or 7

G

= Pb−Free Package

2N5657

TO−225

500 Units / Bulk

2N5657G

TO−225

(Pb−Free)

500 Units / Bulk

Device

Package

Shipping

2N5655

TO−225

500 Units / Bulk

2N5655G

TO−225

(Pb−Free)

500 Units / Bulk

ORDERING INFORMATION

YWW

2

N565xG