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2N6027 Datasheet(PDF) 1 Page - ON Semiconductor |
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2N6027 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2006 May, 2006 − Rev.6 1 Publication Order Number: 2N6027/D 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting two resistor values. Application includes thyristor−trigger, oscillator, pulse and timing circuits. These devices may also be used in special thyristor applications due to the availability of an anode gate. Supplied in an inexpensive TO−92 plastic package for high−volume requirements, this package is readily adaptable for use in automatic insertion equipment. Features • Programmable − RBB, h, IV and IP • Low On−State Voltage − 1.5 V Maximum @ IF = 50 mA • Low Gate to Anode Leakage Current − 10 nA Maximum • High Peak Output Voltage − 11 V Typical • Low Offset Voltage − 0.35 V Typical (RG = 10 kW) • Pb−Free Packages are Available* *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PUTs 40 VOLTS, 300 mW Preferred devices are recommended choices for future use and best overall value. See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ORDERING INFORMATION K G A TO−92 (TO−226AA) CASE 029 STYLE 16 3 2 1 PIN ASSIGNMENT 1 2 3 Gate Cathode Anode http://onsemi.com 2N602x = Device Code x = 7 or 8 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package MARKING DIAGRAM 2N 602x AYWW G G (Note: Microdot may be in either location) |
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