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2N6035_06 Datasheet(PDF) 2 Page - ON Semiconductor

Part No. 2N6035_06
Description  Plastic Darlington Complementary Silicon Power Transistors
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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(PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
2N6034
2N6035, 2N6038
2N6036, 2N6039
VCEO(sus)
40
60
80
−
−
−
Vdc
Collector−Cutoff Current
(VCE = 40 Vdc, IB = 0)
2N6034
(VCE = 60 Vdc, IB = 0)
2N6035, 2N6038
(VCE = 80 Vdc, IB = 0)
2N6036, 2N6039
ICEO
−
−
−
100
100
100
mA
Collector−Cutoff Current
(VCE = 40 Vdc, VBE(off) = 1.5 Vdc)
2N6034
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc)
2N6035, 2N6038
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)
2N6036, 2N6039
(VCE = 40 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)
2N6034
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)
2N6035, 2N6038
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)
2N6036, 2N6039
ICEX
−
−
−
−
−
−
100
100
100
500
500
500
mA
Collector−Cutoff Current
(VCB = 40 Vdc, IE = 0)
2N6034
(VCB = 60 Vdc, IE = 0)
2N6035, 2N6038
(VCB = 80 Vdc, IE = 0)
2N6036, 2N6039
ICBO
−
−
−
0.5
0.5
0.5
mAdc
Emitter−Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
−
2.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.5 Adc, VCE = 3.0 Vdc)
(IC = 2.0 Adc, VCE = 3.0 Vdc)
(IC = 4.0 Adc, VCE = 3.0 Vdc)
hFE
500
750
100
−
15,000
−
−
Collector−Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 8.0 mAdc)
(IC = 4.0 Adc, IB = 40 mAdc)
VCE(sat)
−
−
2.0
3.0
Vdc
Base−Emitter Saturation Voltage
(IC = 4.0 Adc, IB = 40 mAdc)
VBE(sat)
−
4.0
Vdc
Base−Emitter On Voltage
(IC = 2.0 Adc, VCE = 3.0 Vdc)
VBE(on)
−
2.8
Vdc
DYNAMIC CHARACTERISTICS
Small−Signal Current−Gain
(IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz)
|hfe|
25
−
−
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
2N6034, 2N6035, 2N6036
2N6038, 2N6039
Cob
−
−
200
100
pF
*Indicates JEDEC Registered Data.




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