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2N6035_06 Datasheet(PDF) 3 Page - ON Semiconductor

Part No. 2N6035_06
Description  Plastic Darlington Complementary Silicon Power Transistors
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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 3 page
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(PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039
http://onsemi.com
3
Figure 1. Switching Times Test Circuit
4.0
0.04
Figure 2. Switching Times
IC, COLLECTOR CURRENT (AMP)
2.0
1.0
0.6
0.2
0.06
0.1
0.2
0.4
0.6
1.0
2.0
4.0
0.4
0.8
PNP
NPN
tf
tr
ts
td @ VBE(off) = 0
V2
approx
+8.0 V
V1
approx
−12 V
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
25
ms
0
RB
51
D1
+4.0 V
VCC
−30 V
RC
TUT
≈ 8.0 k
≈ 60
SCOPE
for td and tr, D1 is disconnected
and V2 = 0, RB and RC are varied
to obtain desired test currents.
For NPN test circuit, reverse diode,
polarities and input pulses.
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
Figure 3. Thermal Response
t, TIME (ms)
1.0
0.01
0.01
0.5
0.2
0.1
0.05
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1000
500
qJC(t) = r(t) qJC
qJC = 3.12°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
0.7
0.3
0.07
0.03
0.02 0.03
0.3
3.0
30
300




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