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2N6035_06 Datasheet(PDF) 4 Page - ON Semiconductor

Part No. 2N6035_06
Description  Plastic Darlington Complementary Silicon Power Transistors
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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 4 page
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(PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039
http://onsemi.com
4
ACTIVE−REGION SAFE−OPERATING AREA
1.0
5.0
Figure 4. 2N6035, 2N6036
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
7.0
5.0
3.0
2.0
0.1
7.0
10
30
50
100
BONDING WIRE LIMITED
THERMALLY LIMITED
70
1.0
TJ = 150°C
dc
1.0ms
100
ms
Figure 5. 2N6038, 2N6039
0.7
0.5
0.2
20
2N6036
2N6035
0.3
1.0
5.0
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
7.0
5.0
3.0
2.0
0.1
7.0
10
30
50
100
70
1.0
0.7
0.5
0.2
20
2N6039
2N6038
0.3
5.0ms
@ TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
100
ms
1.0ms
5.0ms
dc
BONDING WIRE LIMITED
THERMALLY LIMITED
TJ = 150°C
@ TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 4 and 5 is based on TJ(pk) = 150
_C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150
_C. TJ(pk) may be calculated from the data in Figure 3.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
200
0.04
VR, REVERSE VOLTAGE (VOLTS)
10
0.4 0.6 1.0
2.0
40
4.0
0.06 0.1
0.2
100
50
30
TC = 25°C
Cib
70
Cob
PNP
NPN
Figure 6. Capacitance
20
6.0
10
20
6.0 k
0.04
Figure 7. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
300
0.06
0.1
0.2
0.6
1.0
4.0
600
800
400
1.0 k
2.0 k
VCE = 3.0 V
0.4
2.0
PNP
2N6034, 2N6035, 2N6036
NPN
2N6038, 2N6039
4.0 k
3.0 k
TC = 125°C
25
°C
−55
°C
6.0 k
0.04
IC, COLLECTOR CURRENT (AMP)
300
0.06
0.1
0.2
0.6
1.0
4.0
600
800
400
1.0 k
2.0 k
VCE = 3.0 V
0.4
2.0
4.0 k
3.0 k
TJ = 125°C
25
°C
−55
°C




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