2N6058 datasheet(3/7 Pages) ONSEMI

Part #	2N6058

Description	Darlington Complementary Silicon Power Transistors

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2N6052

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3

Figure 4. Thermal Response

t, TIME (ms)

1.0

0.01

0.5

0.2

0.1

0.05

0.02

0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

200

1000

500

RθJC(t) = r(t) RθJC

RθJC = 1.17°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) θJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01

SINGLE

PULSE

0.1

0.7

0.3

0.07

0.03

0.02

0.03

0.3

3.0

30

300

ACTIVE−REGION SAFE OPERATING AREA

Figure 5. 2N6058

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 6. 2N6052, 2N6059

VCE, COLLECTOR−EMITTER VOLTAGE

(VOLTS)

50

10

20

10

5.0

2.0

0.05

50

100

70

1.0

0.5

0.1

0.2

20

30

50

10

20

10

5.0

2.0

0.05

50

100

70

1.0

0.5

0.1

0.2

20

30

TJ = 200°C

SECOND BREAKDOWN LIM-

ITED

0.1 ms

0.5 ms

1.0 ms

5.0 ms

d

c

0.1 ms

0.5 ms

TJ = 200°C

1.0 ms

5.0 ms

d

c

BONDING WIRE LIMITED

THERMAL LIMITATION

@TC = 25°C (SINGLE PULSE)

SECOND BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMAL LIMITATION

@TC = 25°C (SINGLE PULSE)

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figures 5, 6, and 7 is based on TJ(pk) = 200_C;

TC is variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided TJ(pk)

v 200_C; TJ(pk) may be calculated from the data in Figure

4. At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the

limitations imposed by second breakdown.

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