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BUK452-60B Datasheet(PDF) 5 Page - NXP Semiconductors |
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BUK452-60B Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 7 page Philips Semiconductors Product Specification PowerMOS transistor BUK452-60A/B Fig.13. Typical turn-on gate-charge characteristics. V GS = f(QG); conditions: ID = 15 A; parameter VDS Fig.14. Typical reverse diode current. I F = f(VSDS); conditions: VGS = 0 V; parameter Tj Fig.15. Normalised avalanche energy rating. W DSS% = f(Tmb); conditions: ID = 15 A Fig.16. Avalanche energy test circuit. 0 2 4 6 8 10 QG / nC VGS / V 12 10 8 6 4 2 0 VDS / V =12 48 BUK452-60 20 40 60 80 100 120 140 160 180 Tmb / C 120 110 100 90 80 70 60 50 40 30 20 10 0 WDSS% 0 1 2 BUK452-50A VSDS / V 30 20 10 0 IF / A 25 150 Tj / C = L T.U.T. VDD RGS R 01 VDS -ID/100 + - shunt VGS 0 W DSS = 0.5 ⋅ LID 2 ⋅ BV DSS/(BVDSS − VDD) April 1993 5 Rev 1.100 |
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