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30N06-TF3-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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30N06-TF3-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 8 page 30N06 MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 8 www.unisonic.com.tw QW-R502-087,A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Gate to Source Voltage VGSS ±20 V TC = 25℃ 30 A Continuous Drain Current TC = 100℃ ID 21.3 A Pulsed Drain Current (Note 1) IDM 120 A Avalanche Energy, Single Pulsed (Note 2) EAS 300 mJ Repetitive Avalanche Energy (Note 1) EAR 8 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 7.5 V/ns Total Power Dissipation (TC = 25℃) 80 W Derating Factor Above 25℃ PD 0.53 W/℃ Operation Junction Temperature TJ -55 ~ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL MIN TYP MAX UNIT Thermal Resistance, Junction-to-Case θJC 1.8 °C/W Thermal Resistance, Case-to-Sink θCS 0.5 °C/W Thermal Resistance, Junction-to-Ambient θJA 62.5 °C/W ELECTRICAL CHARACTERISTICS (TC = 25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 60 V VDS = 60 V, VGS = 0 V 1 µA Drain-Source Leakage Current IDSS VDS = 48 V, VGS = 0 V, TJ = 150℃ 10 µA Forward VGS = 20V, VDS = 0 V 100 nA Gate-Source Leakage Current Reverse IGSS VGS = -20V, VDS = 0 V -100 nA Breakdown Voltage Temperature Coefficient BV △ DSS/△TJ ID = 250 µA, Referenced to 25℃ 0.06 V/℃ On Characteristics Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 µA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 15 A 32 40 mΩ Dynamic Characteristics Input Capacitance CISS 800 pF Output Capacitance COSS 300 pF Reverse Transfer Capacitance CRSS VGS = 0 V, VDS = 25 V, f = 1MHz 80 pF Switching Characteristics Turn-On Delay Time tD(ON) 12 ns Turn-On Rise Time tR 79 ns Turn-Off Delay Time tD(OFF) 50 ns Turn-Off Fall Time tF VDD = 30V, ID =15 A, VGS=10V (Note 4, 5) 52 ns Total Gate Charge QG 20 30 nC Gate-Source Charge QGS 6 nC Gate-Drain Charge (Miller Charge) QGD VDS = 60V, VGS = 10 V, ID = 24A (Note 4, 5) 9 nC |
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