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BUK456-1000B Datasheet(PDF) 5 Page - NXP Semiconductors |
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BUK456-1000B Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 7 page Philips Semiconductors Product Specification PowerMOS transistor BUK456-1000B Fig.13. Typical turn-on gate-charge characteristics. V GS = f(QG); conditions: ID = 3.5 A; parameter VDS Fig.14. Typical reverse diode current. I F = f(VSDS); conditions: VGS = 0 V; parameter Tj 0 10 20 30 40 QG / nC VGS / V 12 10 8 6 4 2 0 VDS / V =200 800 BUK456-1000 0 1 2 BUK456-1000A VSDS / V IF / A 10 8 6 4 2 0 25 C 150 C May 1995 5 Rev 1.200 |
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