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IR2301 Datasheet(PDF) 1 Page - International Rectifier |
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IR2301 Datasheet(HTML) 1 Page - International Rectifier |
1 / 18 page Typical Connection HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 5 to 20V • Undervoltage lockout for both channels • 3.3V, 5V and 15V input logic compatible • Matched propagation delay for both channels • Logic and power ground +/- 5V offset. • Lower di/dt gate driver for better noise immunity • Outputs in phase with inputs • Also available LEAD-FREE (PbF) Packages IR2301(S) & (PbF) 8 Lead PDIP IR2301 8 Lead SOIC IR2301S www.irf.com 1 IR2301 V CC V B V S HO LO COM HIN LIN up to 600V TO LOAD V CC LIN HIN Data Sheet No. PD60201 Rev.D (Refer to Lead Assignments for correct pin con- figuration). This/ These diagram(s) show electrical connections only. Please re- fer to our Appli- cation Notes and DesignTips for proper circuit board layout. Description The IR2301(S) are high voltage, high speed power MOSFET and IGBT drivers with indepen- dent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized mono- lithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts. Part Input logic Cross- conduction prevention logic Dead-Time Ground Pins 2106/2301 COM 21064 HIN/LIN no none VSS/COM 2108 Internal 540ns COM 21084 HIN/LIN yes Programmable 0.54~5 µs VSS/COM 2109/2302 Internal 540ns COM 21094 IN/SD yes Programmable 0.54~5 µs VSS/COM 2106/2301//2108//2109/2302/2304 Feature Comparison 2304 HIN/LIN yes Internal 100ns COM |
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Similar Description - IR2301 |
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