MJE350 datasheet(2/5 Pages) STMICROELECTRONICS

Part #	MJE350

Description	COMPLEMETARY SILICON POWER TRANSISTORS

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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2 / 5 page

THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

6.0

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

VCB = 300 V

100

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 3 V

100

µA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 1 mA

300

V

hFE

DC Current Gain

IC = 50 mA

VCE = 10 V

30

240

∗ Pulsed: Pulse duration = 300µs, duty cycle ≤ 2%

Safe Operating Area

Derating Curve

MJE340 / MJE350

2/5

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