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BUK463-60B Datasheet(PDF) 5 Page - NXP Semiconductors

Part # BUK463-60B
Description  PowerMOS transistor
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUK463-60B Datasheet(HTML) 5 Page - NXP Semiconductors

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Philips Semiconductors
Product Specification
PowerMOS transistor
BUK463-60A/B
Fig.13. Typical turn-on gate-charge characteristics.
V
GS = f(QG); conditions: ID = 22 A; parameter VDS
Fig.14. Typical reverse diode current.
I
F = f(VSDS); conditions: VGS = 0 V; parameter Tj
Fig.15. Normalised avalanche energy rating.
W
DSS% = f(Tmb); conditions: ID = 22 A
Fig.16. Avalanche energy test circuit.
0
10
20
QG / nC
VGS / V
12
10
8
6
4
2
0
VDS / V =10
40
BUK453-50
20
40
60
80
100
120
140
160
180
Tmb / C
120
110
100
90
80
70
60
50
40
30
20
10
0
WDSS%
0
1
2
BUK453-50A
VSDS / V
50
40
30
20
10
0
IF / A
150
25
Tj / C =
L
T.U.T.
VDD
RGS
R 01
VDS
-ID/100
+
-
shunt
VGS
0
W
DSS = 0.5 ⋅ LID
2
⋅ BV
DSS/(BVDSS − VDD)
July 1995
5
Rev 1.000


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